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Extra resources for Advances in Joining of Ceramics, Volume 138

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Even Cu/silica bonding growth after the bonding process is over. can be controlled by the intimate contacting step. This implies that the full contact with chemical bonds is very important for ceramic/metal bonding. If the bonding surfaces of alumina or other ceramics are properly metalized before bonding, the bonding process is naturally controlled by the contact process and ceramic/metal bonding can be equated to metal/ metal bonding, although there remains the problem of the mismatch in thermal conO U) Advances in Joining of Ceramics >

Case, "Joining of Non-Oxide Ceramics Using Conventional and Microwave Heating", 21 [4]: 589 - 597, Ceramic Engineering and Science Proceedings, American Ceramic Society, 2000. 50. Ferraris, F. Paolini, E. D. Case, M. Salvo, "Microwave Joining of SiC", submitted, Journal of the American Ceramic Society. 51. J. Zheng and M. Akinc, "Green state joining of SiC without applied pressure", J. Am. Ceram. Soc, 84[11]: 2479 - 2483,2001. 52. Aravindan and R. Krishnamurthy, "Joining of ceramic composites by microwave heating" Mater.

In Al203/Ti bonding, the necessary reaction (metallization of A1 2 0 3 surface) is described. CONTACTING (VOID SHRINKAGE) MODEL Fig. 1 illustrates a two dimensional model of a (a) faying (bonding) surface, a (b) bond-interface and (c) void morphology at the bond-interface. The surface is assumed to be clean and have long triangular ridges with a regular peaks. Two 30 Advances in Joining of Ceramics - w— kA VRnZhw w- wxtrsincc Rhombic void (C) Lenticular void Fig. 1 Two dimenonal modesl of diffusion bonding process controlled by contacting process: (a) faying (bonding) surface, (b) void array at the bondinterface, and (c) translation from rhombic void to lenticular void.

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